Journal article ยท Preprint article
Phonon-limited mobility in n-type single-layer MoS2 from first principles
We study the phonon-limited mobility in intrinsic n-type single-layer MoS2 for temperatures T > 100 K. The materials properties including the electron-phonon interaction are calculated from first principles and the deformation potentials and Frohlich interaction in single-layer MoS2 are established.
The calculated room-temperature mobility of similar to 410 cm(2)V(-1)s(-1) is found to be dominated by optical phonon scattering via intra and intervalley deformation potential couplings and the Frohlich interaction. The mobility is weakly dependent on the carrier density and follows a mu similar to T-gamma temperature dependence with gamma = 1.69 at room temperature.
It is shown that a quenching of the characteristic homopolar mode, which is likely to occur in top-gated samples, increases the mobility with similar to 70 cm(2)V(-1)s(-1) and can be observed as a decrease in the exponent to. = 1.52. In comparison to recent experimental findings for the mobility in single-layer MoS2 (similar to 200 cm(2)V(-1)s(-1)), our results indicate that mobilities close to the intrinsic phonon-limited mobility can be achieved in two-dimensional materials via dielectric engineering that effectively screens static Coulomb scattering on, e.g., charged impurities.
Language: | English |
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Year: | 2012 |
ISSN: | 1550235x , 10980121 and 01631829 |
Types: | Journal article and Preprint article |
DOI: | 10.1103/PhysRevB.85.115317 |
ORCIDs: | Kaasbjerg, Kristen , Thygesen, Kristian S. and Jacobsen, Karsten W. |
ALXGA1-XAS/GAAS HETEROJUNCTIONS GRAPHENE MONOLAYER MOS2 PHYSICS, SCATTERING SEMICONDUCTORS TRANSISTORS