Journal article
Nanoscale patterning of electronic devices at the amorphous LaAlO3/SrTiO3 oxide interface using an electron sensitive polymer mask
A simple approach is presented for designing complex oxide mesoscopic electronic devices based on the conducting interfaces of room temperature grown LaAlO3/SrTiO3 heterostructures. The technique is based entirely on methods known from conventional semiconductor processing technology, and we demonstrate a lateral resolution of similar to 100 nm.
We study the low temperature transport properties of nanoscale wires and demonstrate the feasibility of the technique for defining in-plane gates allowing local control of the electrostatic environment in mesoscopic devices. (C) 2018 Author(s).
Language: | English |
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Publisher: | AIP Publishing LLC |
Year: | 2018 |
ISSN: | 10773118 and 00036951 |
Types: | Journal article |
DOI: | 10.1063/1.5026362 |
ORCIDs: | 0000-0003-4583-4706 , Chen, Yunzhong , 0000-0002-7879-976X , von Soosten, Merlin , Gan, Yulin and Pryds, Nini |