Высокая характеристическая температура лазера на квантовых точках InAs/GaAs/InGaAsP с длиной волны излучения около 1.5 мкм, синтезированного на подложке InP

We report on high temperature stability of a near-1.5 µm laser synthesized on an InP (001) substrate. Self-organized InAs quantum dots capped with a thin GaAs layer were used as an active region of the laser. An InGaAsP quaternary alloy having the bandgap energy of 1.15 eV was utilized as a waveguiding/matrix layer.

A high characteristic temperature of the threshold current of T0 = 205 K, evaluated in the temperature range of 20−50◦C, was achieved in ridge waveguide laser diodes. A correlation of T0 values with the bandgap energy of the waveguiding layer was found.