Journal article
Temperature dependence of the excitonic energy band gap in In(Ga)As nanostructures
We analyzed the temperature-dependent variation of the peak energies in the photoluminescence of InAs/GaAs quantum dots and InAs/In0.2Ga0.8As/GaAs quantum dots in an asymmetric well. The InAs dots were grown by using migration-enhanced molecular beam epitaxy. The peak emission energies decreased monotonously with increasing temperature over the range of measurements from 13 K to 225 K.
The temperature dependence of the peak energy was successfully fitted with two analytic models, namely, the phenomenological Varshni equation and the semi-empirical Fan equation based on electron-phonon statistics, respectively. The physical meaning of the Varshni coefficients is discussed in terms of the phonon energy and the strain in the nanostructures.
Language: | English |
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Publisher: | The Korean Physical Society |
Year: | 2012 |
Pages: | 1828-1832 |
ISSN: | 19768524 and 03744884 |
Types: | Journal article |
DOI: | 10.3938/jkps.60.1828 |