Journal article · Ahead of Print article
A 10 MHz GaNFET Based Isolated High Step-Down DC-DC Converter: Design and Magnetics Investigation
This paper presents design of an isolated high-step-down DC-DC converter based on a class-DE power stage, operating at a 10 MHz switching frequency using enhancement mode Gallium Nitride (GaN) transistors. The converter operating principles are discussed, and the power stage design rated for 20 W is presented for a step-down from 200-300 V to 0-28 V.
Commercially available magnetic materials were explored and the high-frequency (HF) resonant inductor and transformer designs using a low-loss Fair-Rite type 67 material are presented. Finite element simulations have been performed to estimate the parameters of magnetics at 10 MHz. Experimental results are presented at 12 W, 254 V to 22 V and 5 W, 254 V to 14 V on a laboratory prototype operating at 10 MHz.
At 20 W the experimental prototype achieved an efficiency of 85.2%.
| Language: | English |
|---|---|
| Publisher: | IEEE |
| Year: | 2019 |
| Pages: | 3889-3900 |
| ISSN: | 19399367 and 00939994 |
| Types: | Journal article and Ahead of Print article |
| DOI: | 10.1109/TIA.2019.2904455 |
| ORCIDs: | Thummala, Prasanth , Ouyang, Ziwei and Andersen, Michael A. E. |
Class-DE DC-DC conversion Finite-element modeling Gallium Nitride High frequency Resonant conversion Soft switching
Class DE DC-DC power converters DC-DC power convertors Fair-Rite type 67 material GaNFET-based-isolated high step-down DC-DC converter Gallium nitride III-V semiconductors Inductance Inverters Switches Switching frequency Topology class-DE power stage dc-dc converter dc–dc conversion enhancement-mode gallium nitride transistors finite element analysis finite-element modeling (FEM) finite-element simulations gallium compounds gallium nitride (GaN) high frequency (HF) high-frequency resonant inductor magnetic materials power 12.0 W power 20.0 W power 5.0 W power field effect transistors power stage design resonant conversion resonant power convertors soft switching switching convertors transformer designs voltage 0.0 V to 28.0 V voltage 14.0 V voltage 200.0 V to 300.0 V voltage 22.0 V voltage 254.0 V wide band gap semiconductors
