A method to monitor IGBT module bond wire failure using on-state voltage separation strategy

On-state voltage is an important thermal parameter for insulated gate bipolar transistor (IGBT) modules. It is employed widely to predict failure in IGBT module bond wires. However, due to restrictions in work environments and measurement methods, it is difficult to ensure the measurement accuracy for the on-state voltage under practical working conditions.

To address this problem, an on-state voltage separation strategy is proposed for the IGBT modules with respect to the influence of collector current (I c ) and junction temperature (T j ). This method involves the separation of the on-state voltage into a dependent part and two independent parts during the IGBT module bond wire prediction.

Based on the proposed separation strategy, the independent parts in the failure prediction can be removed, making it possible to directly monitor the voltage variations caused by bond wire failure. The experimental results demonstrate that the proposed diagnosis strategy can accurately predict the bond wire failure stage in an IGBT module under different conditions.