Journal article · Conference paper
Characterization of donor-acceptor-pair emission in fluorescent 6H-SiC
We investigated donor-acceptor-pair emission in N-B-doped 6H-SiC samples by using photoluminescence (PL) and angle-resolved PL. It is shown that n-type doping with concentrations larger than 10(18) cm(-3) is favorable for observing luminescence, and increasing nitrogen results in stronger luminescence.
A dopant concentration difference greater than 4x10(18) cm(-3) is proposed to help achieve intense PL. Angular-dependent PL was observed that was attributed to the Fabry-Perot microcavity interference effect, and a strong luminescence intensity in a large emission angle range was also achieved. The results indicate that N-B-doped fluorescent SiC is a good wavelength converter in white LED applications.
Language: | English |
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Year: | 2012 |
Pages: | 014003 |
Proceedings: | 24th Nordic Semiconductor Meeting |
ISSN: | 00318949 and 14024896 |
Types: | Journal article and Conference paper |
DOI: | 10.1088/0031-8949/2012/T148/014003 |
ORCIDs: | Ou, Yiyu and Ou, Haiyan |