Journal article
Photoluminescence Enhancement in Nanotextured Fluorescent SiC Passivated by Atomic Layer Deposited Al2O3 Films
In
Materials Science Forum
—
2016, Volume 858, pp. 493-496
Abstract
The influence of thickness of atomic layer deposited Al2O3 films on nano-textured fluorescent 6H-SiC passivation is investigated. The passivation effect on the light emission has been characterized by photoluminescence and time-resolved photoluminescence at room temperature. The results show that 20nm thickness of Al2O3 layer is favorable to observe a large photoluminescence enhancement (25.9%) and long carrier lifetime (0.86ms).
This is a strong indication for an interface hydrogenation that takes place during post-thermal annealing. These results show that an Al2O3 layer could serve as passivation in fluorescent SiC based white LEDs applications.
| Language: | English |
|---|---|
| Publisher: | Trans Tech Publications Ltd |
| Year: | 2016 |
| Pages: | 493-496 |
| ISSN: | 16629752 , 02555476 and 14226375 |
| Types: | Journal article |
| DOI: | 10.4028/www.scientific.net/MSF.858.493 |
| ORCIDs: | Lu, Weifang , Ou, Yiyu , Fadil, Ahmed , Petersen, Paul Michael and Ou, Haiyan |
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