Journal article
Transferred-Substrate InP/GaAsSb Heterojunction Bipolar Transistor Technology With fmax ~ 0.53 THz
We report on the realization of transferred-substrate InP/GaAsSb double heterostructure bipolar transistors in a terahertz monolithic integrated circuit process. Transistors with 0.4-μm-wide single emitters reached unilateral gain cutoff frequencies of around 530 GHz with simultaneous current gain cutoff frequencies above 350 GHz.
Extrinsic collector capacitance is effectively reduced in the transfer-substrate process. In combination with the high collector breakdown voltage in the InP/GaAsSb heterobipolar transistor structure of 5 V, this process is amenable to analog power applications at millimeter (mm-wave) and sub-mm-wave frequencies.
We demonstrate reliable extraction procedures for unilateral gain and current gain cutoff frequencies.
Language: | English |
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Publisher: | IEEE |
Year: | 2018 |
Pages: | 3704-3710 |
ISSN: | 15579646 and 00189383 |
Types: | Journal article |
DOI: | 10.1109/TED.2018.2854546 |
ORCIDs: | Johansen, Tom Keinicke |
Gallium arsenide antimonide Heterojunction bipolar transistors Indium phosphide Millimeterwave (mm-wave) integrated circuits Submillimeter-wave (sub-mm-wave) integrated circuits
Gold III-V semiconductor materials III-V semiconductors InP-GaAsSb Substrates analog power applications extrinsic collector capacitance gallium arsenide heterobipolar transistor structure heterojunction bipolar transistors high collector breakdown voltage indium compounds indium phosphide millimeter frequencies millimeter-wave (mm-wave) integrated circuits millimetre wave bipolar transistors semiconductor heterojunctions simultaneous current gain cutoff frequencies single emitters size 0.4 mum sub-mm-wave frequencies submillimeter-wave (sub-mm-wave) integrated circuits terahertz monolithic integrated circuit process transfer-substrate process transferred-substrate double heterojunction bipolar transistor technology unilateral gain cutoff frequencies voltage 5.0 V