Query: journal:(International Journal of Circuit Theory and Applications) title:(Highly functional tunnelling devices integrated in 3D), Author: Wernersson, ISSN: 00989886

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journal:(International Journal of Circuit Theory and Applications) title:(Highly functional tunnelling devices integrated in 3D) ISSN: 00989886 Author: Wernersson

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journal:(International AND Journal AND of AND Circuit AND Theory AND and AND Applications) AND title:(Highly AND functional AND tunnelling AND devices AND integrated AND in AND 3D)

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1 Journal article

Highly functional tunnelling devices integrated in 3D

Wernersson, Lars-Erik; Lind, Erik; Lindström, Peter; Andreani, Pietro

International Journal of Circuit Theory and Applications — 2003, Volume 31, Issue 1, pp. 105-117

circuit in order to optimize the performance of the device. In addition to the tunnelling structure below the grating, these transistors may be integrated in 3D by the introduction of another tunnelling structure directly over the metal grating. In the integrated device structure, the gate acts

Year: 2003

Language: English

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2 Journal article

Highly functional tunnelling devices integrated in 3D : TUNNELLING DEVICES IN 3D 10.1002/cta.228