Journal article · Preprint article
Electronic properties of graphene antidot lattices
Theoretical Nanoelectronics Group, Theory Section, Department of Micro- and Nanotechnology, Technical University of Denmark1
Theory Section, Department of Micro- and Nanotechnology, Technical University of Denmark2
Department of Micro- and Nanotechnology, Technical University of Denmark3
Structured Electromagnetic Materials, Department of Photonics Engineering, Technical University of Denmark4
Department of Photonics Engineering, Technical University of Denmark5
Harvard University6
Aalborg University7
Graphene antidot lattices constitute a novel class of nano-engineered graphene devices with controllable electronic and optical properties. An antidot lattice consists of a periodic array of holes that causes a band gap to open up around the Fermi level, turning graphene from a semimetal into a semiconductor.
We calculate the electronic band structure of graphene antidot lattices using three numerical approaches with different levels of computational complexity, efficiency and accuracy. Fast finite-element solutions of the Dirac equation capture qualitative features of the band structure, while full tight-binding calculations and density functional theory (DFT) are necessary for more reliable predictions of the band structure.
We compare the three computational approaches and investigate the role of hydrogen passivation within our DFT scheme.
Language: | English |
---|---|
Publisher: | IOP Publishing |
Year: | 2009 |
Pages: | 095020 |
ISSN: | 13672630 |
Types: | Journal article and Preprint article |
DOI: | 10.1088/1367-2630/11/9/095020 |
ORCIDs: | Mortensen, Asger , Brandbyge, Mads and Jauho, Antti-Pekka |