Journal article
Micro-four-point Probe Hall effect Measurement method
Nanointegration Group, NanoSystemsEngineering Section, Department of Micro- and Nanotechnology, Technical University of Denmark1
NanoSystemsEngineering Section, Department of Micro- and Nanotechnology, Technical University of Denmark2
Department of Micro- and Nanotechnology, Technical University of Denmark3
Silicon Microtechnology Group, MicroElectroMechanical Systems Section, Department of Micro- and Nanotechnology, Technical University of Denmark4
MicroElectroMechanical Systems Section, Department of Micro- and Nanotechnology, Technical University of Denmark5
Center for Nanoteknologi, Centers, Technical University of Denmark6
Center for Individual Nanoparticle Functionality, Centers, Technical University of Denmark7
We report a new microscale Hall effect measurement method for characterization of semiconductor thin films without need for conventional Hall effect geometries and metal contact pads. We derive the electrostatic potential resulting from current flow in a conductive filamentary sheet with insulating barriers and with a magnetic field applied normal to the plane of the sheet.
Based on this potential, analytical expressions for the measured four-point resistance in presence of a magnetic field are derived for several simple sample geometries. We show how the sheet resistance and Hall effect contributions may be separated using dual configuration measurements. The method differs from conventional van der Pauw measurements since the probe pins are placed in the interior of the sample region, not just on the perimeter.
We experimentally verify the method by micro-four-point probe measurements on ultrashallow junctions in silicon and germanium. On a cleaved silicon ultrashallow junction sample we determine carrier mobility, sheet carrier density, and sheet resistance from micro-four-point probe measurements under various experimental conditions, and show with these conditions reproducibility within less than 1.5%. ©2008 American Institute of Physics
Language: | English |
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Publisher: | American Institute of Physics |
Year: | 2008 |
ISSN: | 10897550 and 00218979 |
Types: | Journal article |
DOI: | 10.1063/1.2949401 |
ORCIDs: | Petersen, Dirch Hjorth and Hansen, Ole |