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Journal article

Near interface ionic transport in oxygen vacancy stabilized cubic zirconium oxide thin films

By Raza, Mohsin1; Sanna, Simone2,3; Dos Santos Gómez, Lucia4; Gautron, Eric5; El Mel, Abdel Aziz5; Pryds, Nini2,3; Snyders, Rony1; Konstantinidis, Stéphanos1; Esposito, Vincenzo3,6

From

University of Mons1

Electrofunctional materials, Department of Energy Conversion and Storage, Technical University of Denmark2

Department of Energy Conversion and Storage, Technical University of Denmark3

University of Málaga4

Nantes Université5

Ceramic Engineering & Science, Department of Energy Conversion and Storage, Technical University of Denmark6

The cubic phase of pure zirconia (ZrO2) is stabilized in dense thin films through a controlled introduction of oxygen vacancies (O defects) by cold-plasma-based sputtering deposition. Here, we show that the cubic crystals present at the film/substrate interface near-region exhibit fast ionic transport, which is superior to what is obtained with similar yttrium-stabilized cubic zirconia thin films.

Language: English
Publisher: The Royal Society of Chemistry
Year: 2018
Pages: 26068-26071
ISSN: 14639084 and 14639076
Types: Journal article
DOI: 10.1039/c8cp05465g
ORCIDs: 0000-0002-2163-223X , Esposito, Vincenzo and Pryds, Nini

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