Journal article
Fluorescent SiC as a new material for white LEDs
Linköping University1
Friedrich-Alexander University Erlangen-Nürnberg2
Vilnius University3
Department of Photonics Engineering, Technical University of Denmark4
Nanophotonic Devices, Department of Photonics Engineering, Technical University of Denmark5
KTH Royal Institute of Technology6
Meijo University7
Current III–V-based white light-emitting diodes (LEDs) are available. However, their yellow phosphor converter is not efficient at high currents and includes rare-earth metals, which are becoming scarce. In this paper, we present the growth of a fluorescent silicon carbide material that is obtained by nitrogen and boron doping and that acts as a converter using a semiconductor.
The luminescence is obtained at room temperature, and shows a broad luminescence band characteristic of donor-to-acceptor pair recombination. Photoluminescence intensities and carrier lifetimes reflect a sensitivity to nitrogen and boron concentrations. For an LED device, the growth needs to apply low-off-axis substrates.
We show by ultra-high-resolution analytical transmission electron microscopy using aberration-corrected electrons that the growth mechanism can be stable and that there is a perfect epitaxial relation from the low-off-axis substrate and the doped layer even when there is step-bunching.
Language: | English |
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Year: | 2012 |
Pages: | 014002 |
Proceedings: | 24th Nordic Semiconductor Meeting |
ISSN: | 00318949 and 14024896 |
Types: | Journal article |
DOI: | 10.1088/0031-8949/2012/T148/014002 |
ORCIDs: | Ou, Yiyu and Ou, Haiyan |