Preprint article · Journal article
Fraunhofer response and supercurrent spin switching in black phosphorus with strain and disorder
K.N. Toosi University of Technology1
Department of Photonics Engineering, Technical University of Denmark2
Center for Nanostructured Graphene, Centers, Technical University of Denmark3
Department of Micro- and Nanotechnology, Technical University of Denmark4
Theoretical Nanotechnology, Department of Micro- and Nanotechnology, Technical University of Denmark5
We develop theory models for both ballistic and disordered superconducting monolayer black phosphorus devices in the presence of magnetic exchange field and stress. The ballistic case is studied through a microscopic Bogoliubov-de Gennes formalism, while for the disordered case we formulate a quasiclassical model.
Utilizing the two models, we theoretically study the response of supercurrent to an externally applied magnetic field in two-dimensional black phosphorus Josephson junctions. Our results demonstrate that the response of the supercurrent to a perpendicular magnetic field in ballistic samples can deviate from the standard Fraunhofer interference pattern when the Fermi level and mechanical stress are varied.
This finding suggests the combination of chemical potential and strain is an efficient external knob to control the current response in highly sensitive strain-effect transistors and superconducting quantum interference devices. We also study the supercurrent in a superconductor-ferromagnet-ferromagnet-superconductor junction where the magnetizations of the two adjacent magnetized regions are uniform with misaligned orientations.
We show that the magnetization misalignment can control the excitation of harmonics higher than the first harmonic sinφ (in which φ is the phase difference between the superconductors) in supercurrent and constitutes a full-spin-switching current element. Finally, we discuss possible experimental implementations of our findings.
We foresee our models and discussions could provide guidelines to experimentalists in designing devices and future investigations.
Language: | English |
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Year: | 2018 |
Pages: | 10 |
ISSN: | 1550235x , 24699950 and 24699969 |
Types: | Preprint article and Journal article |
DOI: | 10.1103/PhysRevB.98.184505 |
ORCIDs: | Jauho, Antti Pekka |