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Journal article

Exploring the Tilt-Angle Dependence of electron tunneling across Molecular junction of Self-Assembled Alkanethiols

In A C S Nano 2009, Volume 3, Issue 8, pp. 2073-2080
From

Donostia International Physics Center1

Department of Mathematics, Technical University of Denmark2

Institut de Ciència de Materials de Barcelona3

Theoretical Nanoelectronics Group, Theory Section, Department of Micro- and Nanotechnology, Technical University of Denmark4

Theory Section, Department of Micro- and Nanotechnology, Technical University of Denmark5

Department of Micro- and Nanotechnology, Technical University of Denmark6

University of the Basque Country7

Electronic transport mechanisms in molecular junctions are investigated by a combination of first-principles calculations and current−voltage measurements of several well-characterized structures. We study self-assembled layers of alkanethiols grown on Au(111) and form tunnel junctions by contacting the molecular layers with the tip of a conductive force microscope.

Measurements done under low-load conditions permit us to obtain reliable tilt-angle and molecular length dependencies of the low-bias conductance through the alkanethiol layers. The observed dependence on tilt-angle is stronger for the longer molecular chains. Our calculations confirm the observed trends and explain them as a result of two mechanisms, namely, a previously proposed intermolecular tunneling enhancement as well as a hitherto overlooked tilt-dependent molecular gate effect.

Language: English
Year: 2009
Pages: 2073-2080
ISSN: 1936086x and 19360851
Types: Journal article
DOI: 10.1021/nn9000808
ORCIDs: Brandbyge, Mads

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