Journal article
Exploring the Tilt-Angle Dependence of electron tunneling across Molecular junction of Self-Assembled Alkanethiols
Donostia International Physics Center1
Department of Mathematics, Technical University of Denmark2
Institut de Ciència de Materials de Barcelona3
Theoretical Nanoelectronics Group, Theory Section, Department of Micro- and Nanotechnology, Technical University of Denmark4
Theory Section, Department of Micro- and Nanotechnology, Technical University of Denmark5
Department of Micro- and Nanotechnology, Technical University of Denmark6
University of the Basque Country7
Electronic transport mechanisms in molecular junctions are investigated by a combination of first-principles calculations and current−voltage measurements of several well-characterized structures. We study self-assembled layers of alkanethiols grown on Au(111) and form tunnel junctions by contacting the molecular layers with the tip of a conductive force microscope.
Measurements done under low-load conditions permit us to obtain reliable tilt-angle and molecular length dependencies of the low-bias conductance through the alkanethiol layers. The observed dependence on tilt-angle is stronger for the longer molecular chains. Our calculations confirm the observed trends and explain them as a result of two mechanisms, namely, a previously proposed intermolecular tunneling enhancement as well as a hitherto overlooked tilt-dependent molecular gate effect.
Language: | English |
---|---|
Year: | 2009 |
Pages: | 2073-2080 |
ISSN: | 1936086x and 19360851 |
Types: | Journal article |
DOI: | 10.1021/nn9000808 |
ORCIDs: | Brandbyge, Mads |