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Journal article

Efficiency enhancement of InGaN amber MQWs using nanopillar structures

By Ou, Yiyu1,2; Iida, Daisuke3; Liu, Jin4; Wu, Kaiyu5,6; Ohkawa, Kazuhiro3; Boisen, Anja5,6; Petersen, Paul Michael1,2; Ou, Haiyan1,2

From

Department of Photonics Engineering, Technical University of Denmark1

Diode Lasers and LED Systems, Department of Photonics Engineering, Technical University of Denmark2

King Abdullah University of Science and Technology3

Sun Yat-Sen University4

Department of Micro- and Nanotechnology, Technical University of Denmark5

Nanoprobes, Department of Micro- and Nanotechnology, Technical University of Denmark6

Center for Intelligent Drug Delivery and Sensing Using Microcontainers and Nanomechanics, Department of Health Technology, Technical University of Denmark7

We have investigated the use of nanopillar structures on high indium content InGaN amber multiple quantum well (MQW) samples to enhance the emission efficiency. A significant emission enhancement was observed which can be attributed to the enhancement of internal quantum efficiency and light extraction efficiency.

The size-dependent strain relaxation effect was characterized by photoluminescence, Raman spectroscopy and time-resolved photoluminescence measurements. In addition, the light extraction efficiency of different MQW samples was studied by finite-different time-domain simulations. Compared to the as-grown sample, the nanopillar amber MQW sample with a diameter of 300 nm has demonstrated an emission enhancement by a factor of 23.8.

Language: English
Publisher: De Gruyter
Year: 2018
Pages: 317-322
ISSN: 21928614 and 21928606
Types: Journal article
DOI: 10.1515/nanoph-2017-0057
ORCIDs: Ou, Yiyu , Wu, Kaiyu , Boisen, Anja , Petersen, Paul Michael and Ou, Haiyan
Keywords

InGaN MQWs Light extraction Nanopillar QCSE Strain relaxation

Other keywords

Physics QC1-999 ingan mqws light extraction nanopillar qcse strain relaxation

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