Journal article
An X-band Schottky diode mixer in SiGe technology with tunable Marchand balun
In this paper, we propose a double balanced mixer with a tunable Marchand balun. The circuit is designed in a SiGe BiCMOS process using Schottky diodes. The tunability of the Marchand balun is used to enhance critical parameters for double balanced mixers. The local oscillator-IF isolation can be changed from –51 to –60.5 dB by tuning.
Similarly, the IIP2 can be improved from 41.3 to 48.7 dBm at 11 GHz, while the input referred 1-dB compression point is kept constant at 8 dBm. The tuning have no influence on conversion loss, which remains at 8.8 dB at a LO power level of 11 dBm at the center frequency of 11 GHz. The mixer has a 3 dB bandwidth from 8 to 13 GHz, covering the entire X-band.
The full mixer has a size of 2050 μm × 1000 μm.
| Language: | English |
|---|---|
| Publisher: | Cambridge University Press |
| Year: | 2017 |
| Pages: | 965-976 |
| ISSN: | 17590795 and 17590787 |
| Types: | Journal article |
| DOI: | 10.1017/S1759078716001069 |
| ORCIDs: | Michaelsen, Rasmus Schandorph , Johansen, Tom Keinicke and Zhurbenko, Vitaliy |
1dB compression point Center frequency Circuit design and applications Double balanced mixers Electrical and Electronic Engineering IC technology Integrated circuit manufacture Local oscillators Mixers (machinery) Phase comparators Reconfigurable hardware Schottky barrier diodes Schottky diode mixers Semiconducting silicon Si-based devices and IC technologies Sige bicmos process Silicon alloys Tuning
