Journal article
Ultra Shallow Arsenic Junctions in Germanium Formed by Millisecond Laser Annealing
Nanointegration Group, NanoSystemsEngineering Section, Department of Micro- and Nanotechnology, Technical University of Denmark1
NanoSystemsEngineering Section, Department of Micro- and Nanotechnology, Technical University of Denmark2
Department of Micro- and Nanotechnology, Technical University of Denmark3
Silicon Microtechnology Group, MicroElectroMechanical Systems Section, Department of Micro- and Nanotechnology, Technical University of Denmark4
MicroElectroMechanical Systems Section, Department of Micro- and Nanotechnology, Technical University of Denmark5
Millisecond laser annealing is used to fabricate ultra shallow arsenic junctions in preamorphized and crystalline germanium, with peak temperatures up to 900 degrees C. At this temperature, As indiffusion is observed while yielding an electrically active concentration up to 5.0 x 10(19) cm(-3) for a junction depth of 31 nm.
Ge preamorphization and the consecutive solid phase epitaxial regrowth are shown to result in less diffusion and increased electrical activation. The recrystallization of the amorphized Ge layer during laser annealing is studied using transmission electron microscopy and spectroscopic ellipsometry.
| Language: | English |
|---|---|
| Year: | 2011 |
| Pages: | H39 |
| ISSN: | 19448775 , 10990062 , 21628734 and 21628726 |
| Types: | Journal article |
| DOI: | 10.1149/1.3512990 |
| ORCIDs: | Petersen, Dirch Hjorth and Hansen, Ole |
