Journal article
Integrated tunneling sensor for nanoelectromechanical systems
Transducers based on quantum mechanical tunneling provide an extremely sensitive sensor principle, especially for nanoelectromechanical systems. For proper operation a gap between the electrodes of below 1 nm is essential, requiring the use of structures with a mobile electrode. At such small distances, attractive van der Waals and capillary forces become sizable, possibly resulting in snap-in of the electrodes.
The authors present a comprehensive analysis and evaluation of the interplay between the involved forces and identify requirements for the design of tunneling sensors. Based on this analysis, a tunneling sensor is fabricated by Si micromachining technology and its proper operation is demonstrated. (c) 2006 American Institute of Physics.
Language: | English |
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Publisher: | American Institute of Physics |
Year: | 2006 |
Pages: | 173101 |
ISSN: | 10773118 and 00036951 |
Types: | Journal article |
DOI: | 10.1063/1.2362593 |
ORCIDs: | Boisen, Anja |