Journal article
Engineering piezoresistivity using biaxially strained silicon
Structured Electromagnetic Materials, Department of Photonics Engineering, Technical University of Denmark1
Department of Photonics Engineering, Technical University of Denmark2
Department of Micro- and Nanotechnology, Technical University of Denmark3
Theoretical Nanoelectronics Group, Theory Section, Department of Micro- and Nanotechnology, Technical University of Denmark4
Theory Section, Department of Micro- and Nanotechnology, Technical University of Denmark5
Silicon Microtechnology Group, MicroElectroMechanical Systems Section, Department of Micro- and Nanotechnology, Technical University of Denmark6
MicroElectroMechanical Systems Section, Department of Micro- and Nanotechnology, Technical University of Denmark7
Center for Individual Nanoparticle Functionality, Centers, Technical University of Denmark8
Center for Nanoteknologi, Centers, Technical University of Denmark9
We calculate the shear piezocoefficient of p-type silicon with grown-in biaxial strain using a 66 k·p method. We find a significant increase in the value of the shear piezocoefficient for compressive grown-in biaxial strain, while tensile strain decreases the piezocoefficient. The dependence of the piezocoefficient on temperature and dopant density is altered qualitatively for strained silicon.
In particular, we find that a vanishing temperature coefficient may result for silicon with grown-in biaxial tensile strain. These results suggest that strained silicon may be used to engineer the iezoresistivity to enhance the performance of ezoresistive stress sensors.
Language: | English |
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Publisher: | American Institute of Physics |
Year: | 2008 |
Pages: | 263501 |
ISSN: | 10773118 and 00036951 |
Types: | Journal article |
DOI: | 10.1063/1.3059557 |
ORCIDs: | Brandbyge, Mads , Thomsen, Erik Vilain and Hansen, Ole |