Journal article
Compressibility and thermal expansion of cubic silicon nitride
Department of Physics, Technical University of Denmark1
Technical University of Denmark2
X-ray Crystallography, Department of Chemistry, Technical University of Denmark3
Department of Chemistry, Technical University of Denmark4
University of Oviedo5
European Synchrotron Radiation Facility6
University of Bayreuth7
The compressibility and thermal expansion of the cubic silicon nitride (c-Si3N4) phase have been investigated by performing in situ x-ray powder-diffraction measurements using synchrotron radiation, complemented with computer simulations by means of first-principles calculations. The bulk compressibility of the c-Si3N4 phase originates from the average of both Si-N tetrahedral and octahedral compressibilities where the octahedral polyhedra are less compressible than the tetrahedral ones.
The origin of the unit cell expansion is revealed to be due to the increase of the octahedral Si-N and N-N bond lengths with temperature, while the lengths for the tetrahedral Si-N and N-N bonds remain almost unchanged in the temperature range 295-1075 K.
Language: | English |
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Year: | 2002 |
ISSN: | 1550235x , 10980121 , 01631829 and 10953795 |
Types: | Journal article |
DOI: | 10.1103/PhysRevB.65.161202 |
ORCIDs: | Ståhl, Kenny |