Journal article
Spectral hole-burning and carrier-heating dynamics in InGaAs quantum-dot amplifiers
The ultrafast gain and index dynamics in a set of InAs-InGaAs-GaAs quantum-dot (QD) amplifiers are measured at room temperature with femtosecond resolution. The role of spectral hole-burning (SHB) and carrier heating (CH) in the recovery of gain compression is investigated in detail. An ultrafast recovery of the spectral hole within ~100 fs is measured, comparable to bulk and quantum-well amplifiers, which is contradicting a carrier relaxation bottleneck in electrically pumped QD devices.
The CH dynamics in the QD is quantitatively compared with results on an InGaAsP bulk amplifier. Reduced CH for both gain and refractive index dynamics of the QD devices is found, which is a promising prerequisite for high-speed applications. This reduction is attributed to reduced free-carrier absorption-induced heating caused by the small carrier density necessary to provide amplification in these low-dimensional systems
Language: | English |
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Publisher: | IEEE |
Year: | 2000 |
Pages: | 544-551 |
ISSN: | 15584542 and 1077260x |
Types: | Journal article |
DOI: | 10.1109/2944.865110 |
ORCIDs: | Hvam, Jørn Märcher |
Charge carrier density Electric variables measurement Gain measurement Heat recovery Heating III-V semiconductors InAs-InGaAs-GaAs InAs-InGaAs-GaAs quantum-dot amplifiers InGaAs quantum-dot amplifiers Indium gallium arsenide Quantum dots Quantum well devices Refractive index Temperature measurement carrier relaxation bottleneck carrier-heating dynamics electrically pumped QD devices femtosecond resolution gain compression gallium arsenide high-speed applications high-speed optical techniques index dynamics indium compounds low-dimensional systems optical hole burning quantum well lasers recovery reduced free-carrier absorption-induced heating refractive index dynamics room temperature semiconductor optical amplifiers semiconductor quantum dots small carrier density spectral hole-burning ultrafast gain