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Journal article

Spectral hole-burning and carrier-heating dynamics in InGaAs quantum-dot amplifiers

From

Department of Photonics Engineering, Technical University of Denmark1

Department of Micro- and Nanotechnology, Technical University of Denmark2

Quantum and Laser Photonics, Department of Photonics Engineering, Technical University of Denmark3

The ultrafast gain and index dynamics in a set of InAs-InGaAs-GaAs quantum-dot (QD) amplifiers are measured at room temperature with femtosecond resolution. The role of spectral hole-burning (SHB) and carrier heating (CH) in the recovery of gain compression is investigated in detail. An ultrafast recovery of the spectral hole within ~100 fs is measured, comparable to bulk and quantum-well amplifiers, which is contradicting a carrier relaxation bottleneck in electrically pumped QD devices.

The CH dynamics in the QD is quantitatively compared with results on an InGaAsP bulk amplifier. Reduced CH for both gain and refractive index dynamics of the QD devices is found, which is a promising prerequisite for high-speed applications. This reduction is attributed to reduced free-carrier absorption-induced heating caused by the small carrier density necessary to provide amplification in these low-dimensional systems

Language: English
Publisher: IEEE
Year: 2000
Pages: 544-551
ISSN: 15584542 and 1077260x
Types: Journal article
DOI: 10.1109/2944.865110
ORCIDs: Hvam, Jørn Märcher

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