Journal article
Superconducting vanadium/indium-arsenide hybrid nanowires
University of Copenhagen1
Electron matter interaction, Nanocharacterization, National Centre for Nano Fabrication and Characterization, Technical University of Denmark2
Nanocharacterization, National Centre for Nano Fabrication and Characterization, Technical University of Denmark3
National Centre for Nano Fabrication and Characterization, Technical University of Denmark4
University of California at Santa Barbara5
We report MBE synthesis of InAs/vanadium hybrid nanowires. The vanadium was deposited without breaking ultra-high vacuum after InAs nanowire growth, minimizing any effect of oxidation and contamination at the interface between the two materials. We investigated four different substrate temperatures during vanadium deposition, ranging from -150°C to 250°C.
The structural relation between vanadium and InAs depended on the deposition temperature. The three lower temperature depositions gave vanadium shells with a polycrystalline, granular morphology and the highest temperature resulted in vanadium reacting with the InAs nanowire. We fabricated electronic devices from the hybrid nanowires and obtained a high out-of-plane critical magnetic field, exceeding the bulk value for vanadium.
However, size effects arising from the nanoscale grains resulted in the absence of a well-defined critical temperature, as well as device-to-device variation in the resistivity vs. temperature dependence during the transition to the superconducting state.
Language: | English |
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Year: | 2019 |
Pages: | 294005 |
ISSN: | 13616528 and 09574484 |
Types: | Journal article |
DOI: | 10.1088/1361-6528/ab15fc |
ORCIDs: | 0000-0002-2152-9371 , 0000-0003-0372-8593 , 0000-0002-1533-2783 , 0000-0002-1930-8553 , 0000-0002-7879-976X , 0000-0002-4639-5314 , Fiordaliso, Elisabetta M. , 0000-0002-1229-6801 , 0000-0002-2782-6924 and 0000-0003-4884-4512 |
indium arsenide nanowire hybrids nanowires superconductor vanadium