Journal article
Double D-centers related donor-acceptor-pairs emission in fluorescent silicon carbide
In
Optical Materials Express
—
2019, Volume 9, Issue 1, pp. 295-303
Abstract
A new boron-induced deeper acceptor level (퐷∗-center) different from the D-center in nitrogen-boron co-doped 6H fluorescent silicon carbide (f-SiC) is revealed by measuring the temperature-dependent photoluminescence (PL). The 퐷∗-center is correlated to the dominate donor-acceptor-pair (DAP) recombination at low temperature ranges in f-SiC with a PL peak around 1.90 eV.
A hole-trap with an energy level that lies between the 퐷∗-center and the D-center is predicted to exist in the f-SiC samples. A two-step thermal ionization involving the hole-trap is proposed to explain the evolution of both 퐷∗-center and D-center related temperature-dependent DAP recombination.
| Language: | English |
|---|---|
| Year: | 2019 |
| Pages: | 295-303 |
| ISSN: | 21593930 |
| Types: | Journal article |
| DOI: | 10.1364/OME.9.000295 |
| ORCIDs: | Wei, Yi and Ou, Haiyan |
