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Conference paper · Journal article

Aberration-corrected electron microscopy of MnAs and As nanocrystals and voids in annealed (Ga,Mn)As

By Kovács, András1; Kasama, Takeshi1; Sadowski, J.2; Dietl, T.3; Dunin-Borkowski, Rafal E.1

From

Center for Electron Nanoscopy, Technical University of Denmark1

Lund University2

Polish Academy of Sciences3

Aberration-corrected transmission electron microscopy is used to study voids and nano-crystalline MnAs and As phases formed during the annealing of Mn-doped GaAs. The effects of defocus and inner annular dark-field detector semi-angle on contrast of the nanocrystals are discussed.

Language: English
Publisher: IOP Publishing
Year: 2011
Pages: 012018
Proceedings: 17th International Conference on Microscopy of Semiconducting Materials
ISSN: 17426596 and 17426588
Types: Conference paper and Journal article
DOI: 10.1088/1742-6596/326/1/012018
ORCIDs: Kasama, Takeshi

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