Journal article
E-band Indium Phosphide double heterojunction bipolar transistor monolithic microwave-integrated circuit power amplifier based on stacked transistors
In
Microwave and Optical Technology Letters
—
2018, Volume 61, Issue 2, pp. 550-555
Abstract
A monolithic microwave-integrated circuit 2-stage power amplifier (PA) realized in indium phosphide double heterojunction bipolar transistor technology is presented in this article. The 2- and 3-stacked transistors are used in the driver and power stages, respectively. As a mean to increase the output power capabilities, 2- and 4-way corporate power combiners are implemented in coplanar waveguide technology.
The fabricated PA exhibits a small-signal gain of 13.6 dB at 77 GHz and a 3-dB bandwidth ranging from 74 to 86 GHz. At 78 GHz, the saturated output power is >19.6 dBm.
| Language: | English |
|---|---|
| Publisher: | John Wiley & Sons, Inc. |
| Year: | 2018 |
| Pages: | 550-555 |
| ISSN: | 10982760 and 08952477 |
| Types: | Journal article |
| DOI: | 10.1002/mop.31558 |
| ORCIDs: | Squartecchia, Michele , Johansen, Tom K. and Midili, Virginio |
