Journal article
Subsurface excitations in a metal
Clemson University1
Department of Physics, Technical University of Denmark2
Surface Physics and Catalysis, Department of Physics, Technical University of Denmark3
Silicon Microtechnology Group, MicroElectroMechanical Systems Section, Department of Micro- and Nanotechnology, Technical University of Denmark4
MicroElectroMechanical Systems Section, Department of Micro- and Nanotechnology, Technical University of Denmark5
Department of Micro- and Nanotechnology, Technical University of Denmark6
We investigate internal hot carrier excitations in a Au thin film bombarded by hyperthermal and low energy alkali and noble gas ions. Excitations within the thin film of a metal-oxide-semiconductor device are measured revealing that ions whose velocities fall below the classical threshold given by the free-electron model of a metal still excite hot carriers.
Excellent agreement between these results and a nonadiabatic model that accounts for the time-varying ion-surface interaction indicates that the measured excitations are due to semilocalized electrons near the metal surface.
Language: | English |
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Year: | 2009 |
ISSN: | 1550235x , 10980121 and 01631829 |
Types: | Journal article |
DOI: | 10.1103/PhysRevB.80.161405 |
ORCIDs: | Chorkendorff, Ib and Hansen, Ole |