Journal article
High-confinement gallium nitride-on-sapphire waveguides for integrated nonlinear photonics
Department of Photonics Engineering, Technical University of Denmark1
Nanophotonic Devices, Department of Photonics Engineering, Technical University of Denmark2
Centre of Excellence for Silicon Photonics for Optical Communications, Centers, Technical University of Denmark3
RAS - Ioffe Physico Technical Institute4
We demonstrate a highly effective nonlinearity of 7.3 W −1 m −1 in a high-confinement gallium nitride-on-sapphire waveguide by performing four-wave mixing characterization at telecom wavelengths. Benefitting from a high-index-contrast waveguide layout, we can engineer the device dispersion efficiently and achieve broadband four-wave mixing operation over more than 100 nm.
The intrinsic material nonlinearity of gallium nitride is extracted. Furthermore, we fabricate microring resonators with quality factors above 100,000, which will be promising for various nonlinear applications.
| Language: | English |
|---|---|
| Year: | 2019 |
| Pages: | 1064-1067 |
| ISSN: | 15394794 and 01469592 |
| Types: | Journal article |
| DOI: | 10.1364/OL.44.001064 |
| ORCIDs: | Pu, Minhao , Stassen, Erik , Semenova, Elizaveta and Yvind, Kresten |
