Journal article
Quantitative strain mapping of InAs/InP quantum dots with 1 nm spatial resolution using dark field electron holography
French Alternative Energies and Atomic Energy Commission1
FEI France2
Center for Electron Nanoscopy, Technical University of Denmark3
Nanophotonic Devices, Department of Photonics Engineering, Technical University of Denmark4
Department of Photonics Engineering, Technical University of Denmark5
The optical properties of semiconductor quantum dots are greatly influenced by their strain state. Dark field electron holography has been used to measure the strain in InAs quantum dots grown in InP with a spatial resolution of 1 nm. A strain value of 5.4%60.1% has been determined which is consistent with both measurements made by geometrical phase analysis of high angle annular dark field scanning transmission electron microscopy images and with simulations.
| Language: | English |
|---|---|
| Publisher: | American Institute of Physics |
| Year: | 2011 |
| ISSN: | 10773118 and 00036951 |
| Types: | Journal article |
| DOI: | 10.1063/1.3672194 |
| ORCIDs: | Cooper, David , Semenova, Elizaveta and Yvind, Kresten |
