Journal article
Spatially controlled electrostatic doping in graphene p-i-n junction for hybrid silicon photodiode
University of Delaware1
University of California at Los Angeles2
Columbia University3
University of Minnesota Twin Cities4
Department of Photonics Engineering, Technical University of Denmark5
Ultra-fast Optical Communication, Department of Photonics Engineering, Technical University of Denmark6
Centre of Excellence for Silicon Photonics for Optical Communications, Centers, Technical University of Denmark7
Nanophotonic Devices, Department of Photonics Engineering, Technical University of Denmark8
Hewlett-Packard9
Agency for Science, Technology and Research, Singapore10
...and 0 moreSufficiently large depletion region for photocarrier generation and separation is a key factor for two-dimensional material optoelectronic devices, but only a few device configurations have been explored for a deterministic control over the space charge region area in graphene with convincing scalability.
Here we investigate a graphene-silicon p-i-n photodiode defined in a foundry processed planar photonic crystal waveguide structure, achieving visible—near-infrared, zero-bias, and ultrafast photodetection. Graphene is electrically contacting to the wide intrinsic region of silicon and extended to the p an n doped region, functioning as the primary photocarrier conducting channel for electronic gain.
Graphene significantly improves the device speed through ultrafast out-of-plane interfacial carrier transfer and the following in-plane built-in electric field assisted carrier collection. More than 50 dB converted signal-to-noise ratio at 40 GHz has been demonstrated under zero bias voltage, the quantum efficiency could be further amplified by hot carrier gain on graphene-i Si interface and avalanche process on graphene-doped Si interface.
With the device architecture fully defined by nanomanufactured substrate, this work demonstrates post-fabrication-free two-dimensional material active silicon photonic devices.
Language: | English |
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Publisher: | Nature Publishing Group UK |
Year: | 2018 |
ISSN: | 23977132 |
Types: | Journal article |
DOI: | 10.1038/s41699-018-0080-4 |
ORCIDs: | Hu, Hao and Ding, Yunhong |