Journal article · Preprint article
Dissociation of two-dimensional excitons in monolayer WSe2
Barcelona Institute of Science and Technology1
Department of Physics, Technical University of Denmark2
Computational Atomic-scale Materials Design, Department of Physics, Technical University of Denmark3
University of Manchester4
National Institute for Materials Science5
Technical University of Denmark6
Center for Nanostructured Graphene, Centers, Technical University of Denmark7
Aalborg University8
Two-dimensional (2D) semiconducting materials are promising building blocks for optoelectronic applications, many of which require efficient dissociation of excitons into free electrons and holes. However, the strongly bound excitons arising from the enhanced Coulomb interaction in these monolayers suppresses the creation of free carriers.
Here, we identify the main exciton dissociation mechanism through time and spectrally resolved photocurrent measurements in a monolayer WSe2 p-n junction. We find that under static inplane electric field, excitons dissociate at a rate corresponding to the one predicted for tunnel ionization of 2D Wannier-Mott excitons.
This study is essential for understanding the photoresponse of 2D semiconductors and offers design rules for the realization of efficient photodetectors, valley dependent optoelectronics, and novel quantum coherent phases.
| Language: | English |
|---|---|
| Publisher: | Nature Publishing Group UK |
| Year: | 2018 |
| Pages: | 1633 |
| ISSN: | 20411723 |
| Types: | Journal article and Preprint article |
| DOI: | 10.1038/s41467-018-03864-y |
| ORCIDs: | 0000-0003-0851-5829 , 0000-0003-3701-8119 , Thygesen, Kristian Sommer , 0000-0002-9466-6190 , Latini, Simone and Haastrup, Sten |
