Journal article
Frequency-doubled DBR-tapered diode laser for direct pumping of Ti:sapphire lasers generating sub-20 fs pulses
Diode Lasers and LED Systems, Department of Photonics Engineering, Technical University of Denmark1
Department of Photonics Engineering, Technical University of Denmark2
Femtolasers Produktions GmbH3
Ferdinand-Braun-Institut4
Teraherts Technologies and Biophotonics, Department of Photonics Engineering, Technical University of Denmark5
For the first time a single-pass frequency doubled DBR-tapered diode laser suitable for pumping Ti:sapphire lasers generating ultrashort pulses is demonstrated. The maximum output powers achieved when pumping the Ti:sapphire laser are 110 mW (CW) and 82 mW (mode-locked) respectively at 1.2 W of pump power.
This corresponds to a reduction in optical conversion efficiencies to 75% of the values achieved with a commercial diode pumped solid-state laser. However, the superior electro-optical efficiency of the diode laser improves the overall efficiency of the Ti:sapphire laser by a factor > 2. The optical spectrum emitted by the Ti:sapphire laser when pumped with our diode laser shows a spectral width of 112 nm (FWHM).
Based on autocorrelation measurements, pulse widths of less than 20 fs can therefore be expected.
Language: | English |
---|---|
Year: | 2011 |
Pages: | 12156-12163 |
ISSN: | 10944087 |
Types: | Journal article |
DOI: | 10.1364/OE.19.012156 |
ORCIDs: | Jensen, Ole Bjarlin , Andersen, Peter E. and Petersen, Paul Michael |