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Journal article

Frequency-doubled DBR-tapered diode laser for direct pumping of Ti:sapphire lasers generating sub-20 fs pulses

From

Diode Lasers and LED Systems, Department of Photonics Engineering, Technical University of Denmark1

Department of Photonics Engineering, Technical University of Denmark2

Femtolasers Produktions GmbH3

Ferdinand-Braun-Institut4

Teraherts Technologies and Biophotonics, Department of Photonics Engineering, Technical University of Denmark5

For the first time a single-pass frequency doubled DBR-tapered diode laser suitable for pumping Ti:sapphire lasers generating ultrashort pulses is demonstrated. The maximum output powers achieved when pumping the Ti:sapphire laser are 110 mW (CW) and 82 mW (mode-locked) respectively at 1.2 W of pump power.

This corresponds to a reduction in optical conversion efficiencies to 75% of the values achieved with a commercial diode pumped solid-state laser. However, the superior electro-optical efficiency of the diode laser improves the overall efficiency of the Ti:sapphire laser by a factor > 2. The optical spectrum emitted by the Ti:sapphire laser when pumped with our diode laser shows a spectral width of 112 nm (FWHM).

Based on autocorrelation measurements, pulse widths of less than 20 fs can therefore be expected.

Language: English
Year: 2011
Pages: 12156-12163
ISSN: 10944087
Types: Journal article
DOI: 10.1364/OE.19.012156
ORCIDs: Jensen, Ole Bjarlin , Andersen, Peter E. and Petersen, Paul Michael

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