Journal article
EM simulation assisted parameter extraction for transferred-substrate InP HBT modeling
In this paper, an electromagnetic (EM) simulation assisted parameter extraction procedure is demonstrated for accurate modeling of down-scaled transferred-substrate InP HBTs. The external parasitic network associated with via transitions and device electrodes is carefully extracted from calibrated three-dimensional EM simulations up to 325 GHz.
Following an on-wafer multi-line Through-Reflect-Line calibration procedure, the external parasitic network is de-embedded from the transistor measurements and the active device parameters are extracted in a reliable way. The small-signal model structure augmented with the distributed parasitic network provides accurate small-signal prediction up to 220 GHz.
Language: | English |
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Publisher: | Cambridge University Press |
Year: | 2018 |
Pages: | 1-9 |
ISSN: | 17590795 and 17590787 |
Types: | Journal article |
DOI: | 10.1017/S1759078718000636 |
ORCIDs: | Johansen, Tom Keinicke |