Journal article
Photoluminescence and Raman Spectroscopy Characterization of Boron- and Nitrogen-Doped 6H Silicon Carbide
Department of Photonics Engineering, Technical University of Denmark1
Nanophotonic Devices, Department of Photonics Engineering, Technical University of Denmark2
Linköping University3
Department of Chemistry, Technical University of Denmark4
X-ray Crystallography, Department of Chemistry, Technical University of Denmark5
KTH Royal Institute of Technology6
Meijo University7
Technical University of Denmark8
Nitrogen-boron doped 6H-SiC epilayers grown on low off-axis 6H-SiC substrates have been characterized by photoluminescence and Raman spectroscopy. The photoluminescence results show that a doping larger than 1018 cm-3 is favorable to observe the luminescence and addition of nitrogen is resulting in an increased luminescence.
A dopant concentration difference larger than 4x1018 cm-3 is proposed to achieve intense photoluminescence. Raman spectroscopy further confirmed the doping type and concentrations for the samples. The results indicate that N-B doped SiC is being a good wavelength converter in white LEDs applications.
| Language: | English |
|---|---|
| Publisher: | Trans Tech Publications Ltd |
| Year: | 2012 |
| Pages: | 233-236 |
| ISSN: | 16629752 , 02555476 and 14226375 |
| Types: | Journal article |
| DOI: | 10.4028/www.scientific.net/MSF.717-720.233 |
| ORCIDs: | Ou, Yiyu , Berg, Rolf W. and Ou, Haiyan |
