Journal article
Black silicon laser-doped selective emitter solar cell with 18.1% efficiency
We report fabrication of nanostructured, laser-doped selective emitter (LDSE) silicon solar cells with power conversion efficiency of 18.1% and a fill factor (FF) of 80.1%. The nanostructured solar cells were realized through a single step, mask-less, scalable reactive ion etch (RIE) texturing of the surface.
The selective emitter was formed by means of laser doping using a continuous wave (CW) laser and subsequent contact formation using light-induced plating of Ni and Cu. The combination of RIE-texturing and a LDSE cell design has to our knowledge not been demonstrated previously. The resulting efficiency indicates a promising potential, especially considering that the cell reported in this work is the first proof-of-concept and that the fabricated cell is not fully optimized in terms of plating, emitter sheet resistance and surface passivation.
Due to the scalable nature and simplicity of RIE-texturing as well as the LDSE process, we consider this specific combination a promising candidate for a cost-efficient process for future Si solar cells.
Language: | English |
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Year: | 2016 |
Pages: | 740-747 |
ISSN: | 18793398 and 09270248 |
Types: | Journal article |
DOI: | 10.1016/j.solmat.2015.10.018 |
ORCIDs: | Davidsen, Rasmus Schmidt , Boisen, Anja and Hansen, Ole |