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Journal article · Preprint article

Magnetoresistance of a two-dimensional electron gas in a random magnetic field

By Smith, Anders1,2; Taboryski, Rafael Jozef3,4,5; Hansen, Luise Theil1,6; Sørensen, C.B.7; Hedegård, Per7; Lindelof, P.E.7

From

Department of Energy Conversion and Storage, Technical University of Denmark1

Secretariat, IT, Department of Energy Conversion and Storage, Technical University of Denmark2

Department of Micro- and Nanotechnology, Technical University of Denmark3

Polymer Micro & Nano Engineering, Department of Micro- and Nanotechnology, Technical University of Denmark4

Department of Physics, Technical University of Denmark5

Imaging and Structural Analysis, Department of Energy Conversion and Storage, Technical University of Denmark6

University of Copenhagen7

We report magnetoresistance measurements on a two-dimensional electron gas made from a high-mobility GaAs/AlxGa1-xAs heterostructure, where the externally applied magnetic field was expelled from regions of the semiconductor by means of superconducting lead grains randomly distributed on the surface of the sample.

A theoretical explanation in excellent agreement with the experiment is given within the framework of the semiclassical Boltzmann equation. © 1994 The American Physical Society

Language: English
Year: 1994
Pages: 14726-14729
ISSN: 10953795 , 1550235x and 01631829
Types: Journal article and Preprint article
DOI: 10.1103/PhysRevB.50.14726
ORCIDs: Smith, Anders , Taboryski, Rafael Jozef and Hansen, Luise Theil
Keywords

cond-mat

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