Journal article
Review of electrical characterization of ultra-shallow junctions with micro four-point probes
Nanointegration Group, NanoSystemsEngineering Section, Department of Micro- and Nanotechnology, Technical University of Denmark1
NanoSystemsEngineering Section, Department of Micro- and Nanotechnology, Technical University of Denmark2
Department of Micro- and Nanotechnology, Technical University of Denmark3
Silicon Microtechnology Group, MicroElectroMechanical Systems Section, Department of Micro- and Nanotechnology, Technical University of Denmark4
MicroElectroMechanical Systems Section, Department of Micro- and Nanotechnology, Technical University of Denmark5
Center for Nanoteknologi, Centers, Technical University of Denmark6
Center for Individual Nanoparticle Functionality, Centers, Technical University of Denmark7
Electrical characterization of ultra-shallow junctions, relying on advanced implant and anneal processes, has received much attention in the past few years since conventional characterization methods fail. With continued scaling of semiconductor devices, the problems associated with conventional techniques will become even more evident.
In several recent studies micro four-point probe (M4PP) has been demonstrated as a reliable high precision metrology method for both sheet resistance and Hall effect measurements of ultra-shallow implants and has revealed a promising potential for carrier profiling.
| Language: | English |
|---|---|
| Publisher: | American Vacuum Society |
| Year: | 2010 |
| Pages: | 27-33 |
| ISSN: | 21662754 , 21662746 and 10711023 |
| Types: | Journal article |
| DOI: | 10.1116/1.3224898 |
| ORCIDs: | Petersen, Dirch Hjorth , Hansen, Ole and Bøggild, Peter |
