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Journal article

Growth of GaSb1-xBix by molecular beam epitaxy

By Song, Yuxin1; Wang, Shumin1; Roy, Ivy Saha1; Shi, Peixiong; Hallen, Anders2

From

Chalmers University of Technology1

KTH Royal Institute of Technology2

DTU Danchip, Technical University of Denmark3

Molecular beam epitaxy for GaSb1-xBix is investigated in this article. The growth window for incorporation of Bi in GaSb was found. Strategies of avoiding formation of Bi droplets and enhancing Bi incorporation were studied. The Bi incorporation was confirmed by SIMS and RBS measurements. The Bi concentration in the samples was found to increase with increasing growth temperature and Bi flux.

The position of GaSb1-xBix layer peak in XRD rocking curves is found to be correlated to Bi composition. Surface and structural properties of the samples were also investigated. Samples grown on GaSb and GaAs substrates were compared and no apparent difference for Bi incorporation was found.

Language: English
Publisher: American Vacuum Society
Year: 2012
Pages: 02B114
ISSN: 21662754 , 21662746 , 15208567 and 10711023
Types: Journal article
DOI: 10.1116/1.3672025
ORCIDs: Shi, Peixiong

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