Journal article
Electrical characterization of InGaAs ultra-shallow junctions
Nanointegration Group, NanoSystemsEngineering Section, Department of Micro- and Nanotechnology, Technical University of Denmark1
NanoSystemsEngineering Section, Department of Micro- and Nanotechnology, Technical University of Denmark2
Department of Micro- and Nanotechnology, Technical University of Denmark3
Silicon Microtechnology Group, MicroElectroMechanical Systems Section, Department of Micro- and Nanotechnology, Technical University of Denmark4
MicroElectroMechanical Systems Section, Department of Micro- and Nanotechnology, Technical University of Denmark5
In this study, we investigate the limitations to sheet resistance and Hall effect characterization of ultra-shallow junctions (USJs) in In0.53Ga0.47As. We compare conventional van der Pauw and Hall effect measurements with micro four-point probe (M4PP) and micro Hall effect methods. Due to the high carrier mobility of InGaAs, we extend the micro-Hall effect position error suppression method to also take geometrical magnetoresistance into account.
We find that the conventional techniques fail to measure accurately on n(++)/p(+) USJ due to a significant leakage current, whereas the M4PP and micro Hall effect methods are able to give accurate results. Finally, we observe a significant reduction in the carrier mobility for InGaAs USJ.
| Language: | English |
|---|---|
| Publisher: | American Vacuum Society |
| Year: | 2010 |
| Pages: | C1C41-C1C47 |
| ISSN: | 15208567 , 21662754 , 10711023 and 21662746 |
| Types: | Journal article |
| DOI: | 10.1116/1.3231492 |
| ORCIDs: | Petersen, Dirch Hjorth , Hansen, Ole and Bøggild, Peter |
Hall effect III-V semiconductors carrier mobility gallium arsenide indium compounds leakage currents magnetoresistance semiconductor thin films
