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Journal article

High Performance Ambipolar Diketopyrrolopyrrole-Thieno[3,2-b]thiophene Copolymer Field-Effect Transistors with Balanced Hole and Electron Mobilities

By Chen, Zhuoying1; Lee, Mi Jung1; Ashraf, Raja Shahid2; Gu, Yun3; Albert-Seifried, Sebastian1; Nielsen, Martin Meedom4,5,6; Schroeder, Bob7; Anthopoulos, Thomas D.2; Heeney, Martin2; McCulloch, Iain2; Sirringhaus, Henning1 ...and 1 more

From

University of Cambridge1

Imperial College London2

University of Copenhagen3

Metal Structures in Four Dimensions, Materials Research Division, Risø National Laboratory for Sustainable Energy, Technical University of Denmark4

Materials Research Division, Risø National Laboratory for Sustainable Energy, Technical University of Denmark5

Risø National Laboratory for Sustainable Energy, Technical University of Denmark6

Université libre de Bruxelles7

Ambipolar OFETs with balanced hole and electron field-effect mobilities both exceeding 1 cm2 V−1 s−1 are achieved based on a single-solution-processed conjugated polymer, DPPT-TT, upon careful optimization of the device architecture, charge injection, and polymer processing. Such high-performance OFETs are promising for applications in ambipolar devices and integrated circuits, as well as model systems for fundamental studies.

Language: English
Publisher: WILEY‐VCH Verlag
Year: 2012
Pages: 647-652
ISSN: 15214095 , 09359648 , 15213862 and 09481907
Types: Journal article
DOI: 10.1002/adma.201102786
ORCIDs: Nielsen, Martin Meedom
Keywords

Ambipolar devices Ambipolar transport Field-effect transistors Polymers Solution processing

Other keywords

Electrons Equipment Design Thiophenes Transistors, Electronic ambipolar devices ambipolar transport field‐effect transistors polymers solution processing

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