Journal article
Influence of near-field coupling from Ag surface plasmons on InGaN/GaN quantum-well photoluminescence
We have investigated the borderline between photoluminescence quenching and enhancement of InGaN/GaN quantum-wells due to Ag nanoparticles and their surface plasmon modes. By embedding Ag nanoparticles inside nanohole structures on the p-type layer GaN, luminescence quenching is observed.Increasing the distance between the nanoparticles and quantum-wells has shown to enhance the emission.
We have found that the nano-structure geometry of the metal-semiconductor interface in the near-field of the quantum-wells plays a crucial role in determining whether the emitter performance is enhanced or degraded.
Language: | English |
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Year: | 2016 |
Pages: | 213-216 |
ISSN: | 18727883 and 00222313 |
Types: | Journal article |
DOI: | 10.1016/j.jlumin.2016.03.001 |
ORCIDs: | Fadil, Ahmed , Ou, Yiyu and Ou, Haiyan |