Journal article
Vertically aligned CNT growth on a microfabricated silicon heater with integrated temperature control—determination of the activation energy from a continuous thermal gradient
Department of Micro- and Nanotechnology, Technical University of Denmark1
AIXTRON2
University of Cambridge3
Nanointegration Group, NanoSystemsEngineering Section, Department of Micro- and Nanotechnology, Technical University of Denmark4
NanoSystemsEngineering Section, Department of Micro- and Nanotechnology, Technical University of Denmark5
Silicon microheaters for local growth of a vertically aligned carbon nanotube (VACNT) were fabricated. The microheaters had a four-point-probe structure that measured the silicon conductivity variations in the heated region which is a measure of the temperature. Through FEM simulations the temperature was determined on the entire microheater structure, and the simulated temperatures were verified by micro-Raman spectroscopy.
The microheaters provided a temperature gradient along which VACNTs were grown at 575–800 °C simultaneously. The VACNT growth activation energy was determined to 0.86 eV from the VACNT growth rate variation along the microheater's temperature gradient.
Language: | English |
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Year: | 2011 |
Pages: | 015004 |
ISSN: | 13616439 and 09601317 |
Types: | Journal article |
DOI: | 10.1088/0960-1317/21/1/015004 |
ORCIDs: | Bøggild, Peter |