Journal article
2R-regeneration in a monolithically integrated four-section SOA-EA chip
Department of Photonics Engineering, Technical University of Denmark1
Metro-Access and Short Range Systems, Department of Photonics Engineering, Technical University of Denmark2
Technical University of Denmark3
Nanophotonic Devices, Department of Photonics Engineering, Technical University of Denmark4
Quantum and Laser Photonics, Department of Photonics Engineering, Technical University of Denmark5
Optical regeneration using a monolithically integrated chip formed by a cascade of semiconductor optical amplifiers and saturable absorbers is investigated. Static transfer functions, signal reshaping, extinction ratio enhancement, noise dynamics and device dependence on operation conditions are measured.
Results show that by cascading two-pairs of SOA–EAs a steep static transfer function is achieved. Dynamical measurements show large improvements in extinction ratio as well as a large improvement in the receiver-sensitivity when used as a regenerator for NRZ signals at 10 Gb/s.
| Language: | English |
|---|---|
| Year: | 2009 |
| Pages: | 117-121 |
| ISSN: | 18730310 and 00304018 |
| Types: | Journal article |
| DOI: | 10.1016/j.optcom.2008.09.053 |
| ORCIDs: | Tafur Monroy, Idelfonso , Yvind, Kresten and Mørk, Jesper |
