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Journal article

Dephasing in InAs/GaAs quantum dots

By Borri, Paola1; Langbein, Wolfgang Werner; Mørk, Jesper1,2; Hvam, Jørn Märcher1,2; Heinrichsdorff, F.3; Mao, M.-H.3; Bimberg, Dieter3

From

Department of Photonics Engineering, Technical University of Denmark1

Quantum and Laser Photonics, Department of Photonics Engineering, Technical University of Denmark2

Technische Universität Berlin3

The room-temperature dephasing in InAs/GaAs self-assembled quantum dots is measured using two independent methods: spectal-hole burning and four-wave mixing. Dephasing times weakly dependent on the excitation density are found, with a low density value of 290+/-80 fs from spectal-hole burning and of 260+/-20 fs from four-wave mixing.

Language: English
Year: 1999
Pages: 7784-7787
ISSN: 1550235x , 24699950 , 10953795 and 01631829
Types: Journal article
DOI: 10.1103/PhysRevB.60.7784
ORCIDs: Mørk, Jesper and Hvam, Jørn Märcher
Keywords

DYNAMICS EXCITONS GAAS LASERS OPTICAL AMPLIFIERS PROBE SEMICONDUCTOR SPECTROSCOPY SUBPICOSECOND GAIN TIME

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