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Journal article

Conduction channels at finite bias in single-atom gold contacts

From

Theoretical Nanoelectronics Group, Theory Section, Department of Micro- and Nanotechnology, Technical University of Denmark1

Theory Section, Department of Micro- and Nanotechnology, Technical University of Denmark2

Department of Micro- and Nanotechnology, Technical University of Denmark3

RIKEN4

The University of Tokyo5

We consider the effect of a finite voltage bias on the conductance of single-atom gold contacts. We employ a nonorthogonal spn-tight-binding Hamiltonian combined with a local charge neutrality assumption. The conductance and charge distributions for finite bias are calculated using the nonequilibrium-Green-function formalism.

We calculate the voltage drop through the contacts and find the main drop located near the negative electrode. We argue that this is due to the filled d-state resonances. The conduction is analyzed in terms of transmission eigenchannels and density of states of the eigenchannels projected onto tight-binding orbitals.

We find a single almost fully transmitting channel with mainly s character for low bias while for high bias this channel becomes less transmitting and additional channels involving only d orbitals start to conduct.

Language: English
Year: 1999
Pages: 17064-17070
ISSN: 10953795 , 01631829 and 1550235x
Types: Journal article
DOI: 10.1103/PhysRevB.60.17064
ORCIDs: Brandbyge, Mads

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