Journal article
Improved External Base Resistance Extraction for Submicrometer InP/InGaAs DHBT Models
An improved direct parameter extraction method is proposed for III–V heterojunction bipolar transistor (HBT) external base resistance $R_{\rm bx}$ extraction from forward active $S$-parameters. The method is formulated taking into account the current dependence of the intrinsic base–collector capacitance found in III–V HBTs with a fully depleted collector.
It is shown that the real part of $Z_{11} - Z_{12}$ reduces to the external base resistance at the collector current $I_{c} = I_{p}/(\hbox{1} - X_{0})$, where $I_{p}$ is a characteristic current and $X_{0}$ is the zero-current distribution factor given as the ratio of the emitter to the collector area.
The determination of the parameters $I_{p}$ and $X_{0}$ from experimental $S$-parameters is described. The method is applied to high-speed submicrometer InP/InGaAs DHBT devices and leads to small-signal equivalent circuit models, which accurately predicts the measured $S$-parameters as well as the maximum stable power gain/maximum available power gain in the frequency range from 40 MHz to 110 GHz.
| Language: | English |
|---|---|
| Publisher: | IEEE |
| Year: | 2011 |
| Pages: | 3004-3011 |
| ISSN: | 15579646 and 00189383 |
| Types: | Journal article |
| DOI: | 10.1109/TED.2011.2160067 |
| ORCIDs: | Johansen, Tom Keinicke |
Capacitance DH-HEMTs DHBT device DHBT models Heterojunction bipolar transistors InP-InGaAs Indium gallium arsenide Indium phosphide Integrated circuit modeling Resistance active S-parameters capacitance characteristic current collector area collector current direct parameter extraction method external base resistance extraction heterojunction bipolar transistor heterojunction bipolar transistor (HBT) heterojunction bipolar transistors intrinsic base-collector capacitance small-signal equivalent circuit model small-signal model submicrometer zero-current distribution factor
