Conference paper
Black Silicon realized by reactive ion etching (ICP) without platen power
Reflectance and minority carrier lifetime were measured for black silicon textured by different inductively coupled plasma (ICP) reactive ion etching processes without any capacitively coupled power (platen power). Reflectance was reduced to below 5% after 2 minutes and below 4% after 3 minutes etch time, with several accessible routes to lower reflectance identified.
Black silicon wafers were passivated by atomic-layer deposited (ALD) Al2O3 and minority carrier lifetime was measured to 2.1 ms for 2 minutes texturing, while minority carrier lifetimes were well below 1.0 ms for etch times in the 5-20 min range. Samples measured immediately after ALD activation, show minority carrier lifetime above 3 ms for RIE process time between 1.5 and 3 min and between 2.5 and 3 ms for etching times above 3 min.
These results indicate that ultra-low reflectance and minority carrier lifetime on par with those of the best passivated solar cells to date may be achieved after texturing for just 2 min.
| Language: | English |
|---|---|
| Publisher: | IEEE |
| Year: | 2018 |
| Pages: | 0041-0044 |
| Proceedings: | 7th World Conference on Photovoltaic Energy Conversion |
| ISBN: | 1538685299 , 1538685302 , 9781538685297 and 9781538685303 |
| Types: | Conference paper |
| DOI: | 10.1109/PVSC.2018.8548283 |
| ORCIDs: | Davidsen, Rasmus Schmidt , Iandolo, Beniamino and Hansen, Ole |
Aluminum oxide Charge carrier lifetime Etching ICP reactive ion etching Photovoltaic cells Reflectivity Si Silicon atomic layer deposition atomic-layer deposition black silicon black silicon texturing black silicon wafers carrier lifetime elemental semiconductors etching processes inductively coupled plasma reactive ion etching minority carrier lifetime minority carriers passivated solar cells passivation plasma materials processing reflectance reflectivity semiconductor thin films silicon silicon solar cells solar cells sputter etching surface recombination surface texture time 1.5 min to 3.0 min time 2.1 ms time 2.5 ms to 3.0 ms time 5.0 min to 20.0 min ultra-low reflectance
