Conference paper
Optimization of self-mixing modulation in VCSELs for sensing applications
This paper numerically investigates, SMI in an oxide aperture VCSEL to optimize the epitaxial structure for higher performance. The standard investigated structure is emitting light at 970 nm from In0.17Ga0.83As-GaAsP QWs sandwiched between 36 pairs of bottom mirror and 23 pairs of top mirror (AlxGa1-xAs).
The calculations are based on matrix multiplication for calculating effective reflectivity and transmission with external feedback, combined with a logarithmic gain model and standard laser rate equations. To improve the sensitivity towards self-mixing interference in VCSELs by simple epitaxial means and this should enable us to e.g. measure smaller bending deflections of cantilever sensors
| Language: | English |
|---|---|
| Publisher: | IEEE |
| Year: | 2009 |
| Pages: | 1-1 |
| Proceedings: | European Conference on Lasers and Electro-Optics - European Quantum Electronics Conference 2009 |
| ISBN: | 1424440793 , 9781424440795 , 1424440807 and 9781424440801 |
| Types: | Conference paper |
| DOI: | 10.1109/CLEOE-EQEC.2009.5192873 |
| ORCIDs: | Yvind, Kresten and Hvam, Jørn Märcher |
III-V semiconductors In<sub>0.17</sub>Ga<sub>0.83</sub>As-GaAsP Interference Laser feedback Mirrors Optical feedback Optical interferometry Optical modulation Power lasers Reflectivity Surface emitting lasers Vertical cavity surface emitting lasers bending deflection measurement epitaxial structure optimization external feedback transmission gallium arsenide gallium compounds indium compounds laser cavity resonators laser feedback laser mirrors logarithmic gain model measurement by laser beam mirror optical modulation optical sensors oxide aperture VCSEL reflectivity sandwiched QW self-mixing modulation semiconductor epitaxial layers sensing applications standard laser rate equations surface emitting lasers wavelength 970 nm
