Conference paper
Black silicon with tunnel oxide passivated contacts
We investigate surfaces of black silicon (bSi) fabricated by reactive ion etch (RIE) on n-type Si substrates and passivated by in-situ doped polycrystalline Si (poly-Si) deposited by low pressure chemical vapor deposition (LPCVD). We achieved full surface coverage of bSi surfaces for poly-Si thickness of 20 nm.
We determined sheet resistance on p-type and n-type poly-Si by means of micro four-point probe measurements. Effective lifetime mapping on symmetrically passivated samples shows that n-type poly-Si offers excellent surface passivation after hydrogenation, reaching effective lifetime values of almost 4 ms on non-textured substrates.
P-type poly-Si shows values of effective lifetime lower than 800 μs and requires further improvement. We calculated i-Voc of up to 711 mV and 609 mV for asymmetrically passivated lifetime samples without texturing and with bSi, respectively. The effective lifetime is limited by the less-than-optimal passivation of the p-type poly-Si.
Preliminary solar cell measurements indicate that both cell voltage and fill factor require major improvement on textured surfaces. Current work is directed towards the following goals: improving the quality of the p-type poly-Si; testing possible replacement of wet chemistry to grow the tunnel oxide using dry furnace oxidation; fabricating and comparing cells with p-n junction at the front or at the bottom of the cell.
Language: | English |
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Year: | 2018 |
Pages: | 668-671 |
Proceedings: | 35th European Photovoltaic Solar Energy Conference and Exhibition |
ISBN: | 3936338507 and 9783936338508 |
Types: | Conference paper |
DOI: | 10.4229/35thEUPVSEC20182018-2AV.3.19 |
ORCIDs: | Witthøft, Maria-Louise , Davidsen, Rasmus S. , Petersen, Dirch H. , Hansen, Ole and Iandolo, Beniamino |